IGBT
Description:
The IGBT single tube is a high performance power semiconductor device that combines the high speed characteristics of a MOSFET with the high current capability of a BJT. It has three regions: the npn BJT region, the p-channel MOSFET region and the n-channel MOSFET region. Its base is isolated from the gate by an insulating layer, allowing for low power consumption and simple drive circuits, making it one of the leading choices for modern high performance power electronics devices.
